Effect of Cu-Cu Hybrid Bonding Height in the 3D Stacked Die Configuration: Thermal-Structural Analysis

Abstract

Advanced packaging technologies, such as Intel’s Embedded Multi-Die Interconnect Bridge and Foveros, have revolutionized semiconductor integration by enabling compact, high-performance devices through 3D stacked die configurations. This study focuses on the warpage effects in 3D stacked die configurations using copper-copper (Cu-Cu) hybrid bonding under thermal cyclic conditions, which are critical for ensuring semiconductor device reliability. The research employs ANSYS simulations through Thermal-Structural Coupling to analyze temperature distribution, thermal strain, and Von-Mises stress across different Cu-Cu hybrid bonding heights. Findings indicate uniform heat transfer across thermal cycles, with significant stress concentrations at corner bonding interfaces. Reducing Cu-Cu hybrid bonding height from 0.025 mm to 0.017 mm mitigates thermal strain and stress, with the 0.017 mm height proving optimal for minimizing warpage effects. This research provides insights crucial for enhancing semiconductor packaging reliability. It addresses industry demands for energy-efficient and compact electronic devices and supports industry standards, cost-efficiency, and innovation in semiconductor engineering.