I–V Characteristics of ISFET Devices in Iron(II) Fumarate Solutions

Authors

  • Piotr Firek Warsaw University of Technology, Institute of Microelectronics and Optoelectronics Warsaw, Poland
  • Piotr Niedzielski Łodz University of Technology, Institute of Materials Science and Engineering, Poland

DOI:

https://doi.org/10.24425/ijet.2026.157940

Keywords

ISFET, I–V characteristics, iron(II) fumarate, ionsensitive transistor, electrolyte interface, multicomponent ionic environment

Abstract

This work presents the fabrication process and I–V
characteristics of ISFET devices with an open gate. Measurements
were performed in deionized water and in deionized water
solutions containing iron(II) fumarate at various concentrations.
Changes in the electrical parameters of the transistors were
analyzed as a function of electrolyte composition, with particular
emphasis on the influence of Fe2+ ions and fumarate anions. The
study aimed to assess the sensitivity and stability of ISFET devices
in a complex ionic environment.

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Published

2026-06-02

How to Cite

Firek, Piotr, and Piotr Niedzielski. “I–V Characteristics of ISFET Devices in Iron(II) Fumarate Solutions”. International Journal of Electronics and Telecommunications, vol. 72, no. 2, June 2026, pp. 1-6, doi:10.24425/ijet.2026.157940.

Issue

Vol. 72 No. 2 (2026)

Section

Artykuły

License

Copyright (c) 2026 International Journal of Electronics and Telecommunications

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.


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