Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates

Authors

  • Dmitri Lubyshev IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
  • Joel M. Fastenau IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
  • Michael Kattner IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
  • Philip Frey IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
  • Scott A. Nelson IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
  • Ryan Flick IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
  • Ying Wu IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
  • Amy W. K. Liu IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
  • Dennis E. Szymanski IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
  • Becky Martinez IQE, Pascal Close, St. Mellons, Cardiff, CF3 0LW, UK
  • Mark J. Furlong IQE, Pascal Close, St. Mellons, Cardiff, CF3 0LW, UK
  • Richard Dennis QmagiQ, LCC, 22 Cotton Rd., Unit H, Suite 180, Nashua, NH 03063, USA
  • Jason Bundas QmagiQ, LCC, 22 Cotton Rd., Unit H, Suite 180, Nashua, NH 03063, USA
  • Mani Sundaram QmagiQ, LCC, 22 Cotton Rd., Unit H, Suite 180, Nashua, NH 03063, USA

DOI:

https://doi.org/10.24425/opelre.2023.144568

Abstract

Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on high-index substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.

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Published

2026-03-11

How to Cite

Lubyshev, Dmitri, et al. “Growth and Characterisation of LWIR T2SL on (100)-, (211)- and (311)-Oriented GaSb Substrates”. Opto-Electronics Review, Mar. 2026, p. e144568, doi:10.24425/opelre.2023.144568.

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