Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

Authors

  • I.I Izhninab
  • O.I. Fitsych
  • Z. Świątek
  • Y. Morgiel
  • O.Yu. Bonchyk
  • H.V. Savytskyy
  • K.D. Mynbaev
  • A.V. Voitsekhovskii
  • A.G. Korotaev
  • M.V. Yakushev
  • V.S. Varavin
  • D.V. Marin
  • S.A. Dvoretsky

Keywords

HgCdTe, Implantation, Defects, Microscopy

Abstract

Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted.

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Published

2026-04-13

How to Cite

Izhninab, I.I, et al. “Effect of Annealing on the Structural Properties of Arsenic-Implanted Mercury Cadmium Telluride”. Opto-Electronics Review, vol. 27, no. 1, Apr. 2026, pp. 14-17, https://wydawnictwo.pan.pl/index.php/opelre/article/view/629.

Issue

Vol. 27 No. 1 (2019)

Section

Articles

License

Copyright (c) 2026 Opto-Electronics Review

Creative Commons License

This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

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