MORATH, Christian P. et al. Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors. Opto-Electronics Review, [S. l.], p. e144554, 2026. DOI: 10.24425/opelre.2023.144554. Disponível em: https://wydawnictwo.pan.pl/index.php/opelre/article/view/434. Acesso em: 17 apr. 2026.