BRAGA, Osvaldo M. et al. Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP. Opto-Electronics Review, [S. l.], p. e144562, 2026. DOI: 10.24425/opelre.2023.144562. Disponível em: https://wydawnictwo.pan.pl/index.php/opelre/article/view/444. Acesso em: 17 apr. 2026.