MARCZEWSKI, J. et al. THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy. Opto-Electronics Review, [S. l.], v. 26, n. 4, p. 261–269, 2018. DOI: 10.1016/j.opelre.2018.08.002. Disponível em: https://wydawnictwo.pan.pl/index.php/opelre/article/view/698. Acesso em: 1 sep. 2026.