Durlin Q, Aliane A, André L, Kaya H, Le Cocq M, Goudon V, et al. Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region. Opto-Electron. Rev. [Internet]. 2026 Mar. 11 [cited 2026 Apr. 18];:e144550. Available from: https://wydawnictwo.pan.pl/index.php/opelre/article/view/426