1.
Marczewski J, Coquillat D, Knap W, Kolacinski C, Kopyt P, Kucharski K, et al. THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy. Opto-Electron. Rev. [Internet]. 2026 Apr. 26 [cited 2026 May 14];26(4):261-9. Available from: https://wydawnictwo.pan.pl/index.php/opelre/article/view/698