Mechanisms of electrical conductivity, quantum capacity and negative capacitance effects in InSe nanohybrid

Abstract

In this work, we present findings on the syntheses and study of properties of InSe<PTHQ> nanohybrid. The introduction of guest component in GaSe matrix leads to an increase in inhomogeneities, which is clearly confirmed by the strengthening of the low-frequency horizontal branch of Nyquist diagrams. A constant magnetic field counteracts this effect and changes the behavior of the impedance hodograph at low frequencies to the opposite. Illumination leads to a colossal increase in quantum capacitance, which is clearly demonstrated in the Nyquist diagram. For the synthesized InSe<PTHQ> nanohybrid the interesting behavior of the current-voltage characteristic is reported. As a result of studies of the synthesized InSe<PTHQ> nanohybrid the effect of “negative capacity” is observed, the magnitude of which can be controlled by the electric field. Based on the constructed impedance model and proposed N-barrier model, the physical mechanisms of the investigated processes are suggested.