Small-signal model of RF InAlGaN/GaN HEMT and on-chip calibration structures

Authors

  • Martin Florovič Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
  • Michal Dzuriš Institute of Electrical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
  • Jakub Krchnák Institute of Electrical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
  • Aleš Chvála Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
  • Jaroslav Kováč, jr. Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
  • Soňa Kováčová Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
  • Jaroslav Kováč Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
  • René Harťanský Institute of Electrical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
  • Ľubica Stuchlíková Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
  • Matej Matuš Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

DOI:

https://doi.org/10.24425/ijet.2026.157914

Keywords

GaN, HEMT, RF on-chip calibration, Sparameters, Z-parameters, small-signal model

Abstract

The advanced GaN-based devices utilized for highperformance
radio frequency (RF) applications are intensively
studied to be used as RF sensors or amplifiers. The paper is focused
on microwave characterization of two port passive devices,
especially on-chip calibration structures and InAlGaN/GaN
electron mobility transistor (HEMT) operating in the cold bias
region (zero applied voltage). The acquired S-parameters are
inputs to build a passive device small-signal model consisting of
three star-connected impedances. The calculated Z-parameters are
possible to be utilized for on-chip signal paths design. The
parameters to be calculated are assumed frequency independent,
however, more proper HEMT modelling requires non-zero voltage
application, therefore, the model possibilities are depicted and
discussed.

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Published

2026-06-02

How to Cite

Florovič, Martin, et al. “Small-Signal Model of RF InAlGaN GaN HEMT and on-Chip Calibration Structures”. International Journal of Electronics and Telecommunications, vol. 72, no. 2, June 2026, pp. 1-7, doi:10.24425/ijet.2026.157914.

Issue

Vol. 72 No. 2 (2026)

Section

Artykuły

License

Copyright (c) 2026 International Journal of Electronics and Telecommunications

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.


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