I–V Characteristics of ISFET Devices in Iron(II) Fumarate Solutions

Autor

  • Piotr Firek Warsaw University of Technology, Institute of Microelectronics and Optoelectronics Warsaw, Poland
  • Piotr Niedzielski Łodz University of Technology, Institute of Materials Science and Engineering, Poland

DOI:

https://doi.org/10.24425/ijet.2026.157940

Keywords

ISFET, I–V characteristics, iron(II) fumarate, ionsensitive transistor, electrolyte interface, multicomponent ionic environment

Abstrakt

This work presents the fabrication process and I–V
characteristics of ISFET devices with an open gate. Measurements
were performed in deionized water and in deionized water
solutions containing iron(II) fumarate at various concentrations.
Changes in the electrical parameters of the transistors were
analyzed as a function of electrolyte composition, with particular
emphasis on the influence of Fe2+ ions and fumarate anions. The
study aimed to assess the sensitivity and stability of ISFET devices
in a complex ionic environment.

Pobrania

Opublikowane

2026-06-02

Jak cytować

Firek, Piotr, i Piotr Niedzielski. „I–V Characteristics of ISFET Devices in Iron(II) Fumarate Solutions”. International Journal of Electronics and Telecommunications, t. 72, nr 2, czerwiec 2026, s. 1-6, doi:10.24425/ijet.2026.157940.

Numer

Tom 72 Nr 2 (2026)

Dział

Artykuły

Licencja

Prawa autorskie (c) 2026 International Journal of Electronics and Telecommunications

Creative Commons License

Utwór dostępny jest na licencji Creative Commons Uznanie autorstwa 4.0 Międzynarodowe.


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