The use of one-component plasma in the ICP-RIE etching process of periodic structures for applications in photodetector arrays

Authors

  • Marta Różycka Łukasiewicz Research Network - Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, Poland
  • Agata Jasik Łukasiewicz Research Network - Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, Poland
  • Paweł Kozłowski Łukasiewicz Research Network - Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, Poland
  • Krzysztof Bracha Łukasiewicz Research Network - Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, Poland
  • Jacek Ratajczak Łukasiewicz Research Network - Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, Poland
  • Anna Wierzbicka-Miernik Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta Street, 30-059, Kraków, Poland

DOI:

https://doi.org/10.24425/mms.2023.147955

Keywords

ICP-RIE, dry etching, type II InAs/GaSb superlattice, BCl3

Abstract

The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that using a lower flow rate of 7 sccm results in obtaining a smoother sidewall morphology. Next, five periodic mesa-shaped structures were etched under identical conditions, but using a different time. The results indicated that the ICP-RIE method using a BCl3 flow rate of 7 sccm, ICP:RIE power ratio of 300W:270W allowed the ICP:RIE formation of a periodic mesa-shaped structure with smooth and perpendicular sidewalls.

References

[1] Jasik, A., Sankowska, I., Ratajczak, J., Wawro, A., Smoczyński, D., Czuba, K., & Wzorek, M. (2019). Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE. Current Applied Physics, 19(2), 120-127. https://doi.org/10.1016/j.cap.2018.11.017

[2] Smoczyński, D., Czuba, K., Papis-Polakowska, E., Kozłowski, P., Ratajczak, J., Sankowska, I., & Jasik, A. (2020). The impact of mesa etching method on IR photodetector current-voltage characteristics. Materials Science in Semiconductor Processing, 118, 105219. https://doi.org/10.1016/j.mssp.2020.105219

[3] Martyniuk, P., & Gawron, W. (2014). Barrier Detectors versus homojunction photodiode. Metrology and Measurement Systems, 21(4). https://doi.org/10.2478/mms-2014-0058

[4] Swaminathan, K., Janardhanan, P. E., & Sulima, O. (2008). Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry. Thin Solid Films, 516(23), 8712-8716. https://doi.org/10.1016/j.tsf.2008.05.029

[5] Chen, G., Nguyen, B., Hoang, A. M., Huang, E. K. W., Darvish, S. R., & Razeghi, M. (2011). Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors. Applied Physics Letters, 99(18). https://doi.org/10.1063/1.3658627

[6] Huang, H., Xiang, W., Wang, G., Xu, Y., Ren, Z., Han, X., He, Z., Liu, Y., Wei,‘S., & Niu,‘Z. (2015). Wet chemical etching of Antimonide-Based infrared materials. Chinese Physics Letters, 32(10), 107302. https://doi.org/10.1088/0256-307X/32/10/107302

[7] Nguyen, J., Soibel, A., Ting, D. Z., Hill, C. J., Lee, M. C., & Gunapala, S. D. (2010). Low dark current long-wave infrared InAs/GaSb superlattice detectors. Applied Physics Letters, 97(5). https://doi.org/10.1063/1.3476342

[8] Ma, Y., Zhang, Y., Yuan, G., Chen, X., Shi, Y., Ji, W., Xi, S., Du, B., Li, X., Tang, H., Li, Y., & Fang, J. (2016). Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors. Optics Express, 24(7), 7823. https://doi.org/10.1364/oe.24.007823

[9] Huang, E. K. W., Nguyen, B. M., Hoffman, D., Delaunay, P. Y., & Razeghi, M. (2009). Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays. Proceedings of SPIE. https://doi.org/10.1117/12.810030

[10] Tao, F., Zhu, X., Wang, J., He, Y., Ding, J., Yao, G., Zhang, L., Cao, X., & Lv, Y. (2020). Inductively coupled plasma (ICP) dry etching of type II InAs/GaSb superlattice for focal plane arrays. In AOPC 2020: Display Technology, 115650I. https://doi.org/10.1117/12.2575638

[11] Huang, M., Chen, J., Xu, J., Wang, F., Xu, Z., & He, L. (2018). ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors. Infrared Physics & Technology, 90, 110-114. https://doi.org/10.1016/j.infrared.2018.03.003

[12] Jung, H. C., Kang, K. K., Ryu, S. M., Lee, T., Kim, J. G., Eom, J. H., Kim, Y. C., Jang, A., Lee, H. J., Kim, Y. H., Jung, H., Kim, S. H., & Choi, J. H. (2021). Investigation of ICP dry etching of InAs/GaSb type-II superlattice LWIR photodetector. In Infrared Technology and Applications XLVII (Vol. 11741, pp. 377-381). SPIE. https://doi.org/10.1117/12.2588043

[13] Nguyen, J., Gill, J., Rafol, B., Soibel, A., Khoshakhlagh, A., Ting, D. Z., Keo, S. A., Fisher, A. M., Luong, E. M., Liu, J., Mumolo, J. M., & Gunapala, S. D. (2012). Inductively coupled plasma etching for delineation of InAs/GaSb pixels. Proceedings of SPIE. https://doi.org/10.1117/12.930046

[14] Manurkar, P., Ramezani-Darvish, S., Nguyen, B. M., Razeghi, M., & Hubbs, J. E. (2010). High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices. In Applied Physics Letters, 97(19). https://doi.org/https://doi.org/10.1063/1.3514244

[15] Delaunay, P. Y., & Razeghi, M. (2008, February). High-performance focal plane array based on type-II InAs/GaSb superlattice heterostructures. In Quantum Sensing and Nanophotonic Devices V (Vol. 6900, pp. 141-150). SPIE. https://doi.org/10.1117/12.776257

[16] He, B., Ding, S., & Shi, Z. (2021). A comparison between profile and areal surface roughness parameters. Metrology and Measurement Systems, 28(3), 413-438. https://doi.org/10.24425/mms.2021.137133

[17] Tarasiuk, W., Szymczak, T., & Borawski, A. (2020). Investigation of surface after erosion using optical profilometry technique. Metrology and Measurement Systems, 27(2), 265-273. https://doi.org/10.24425/mms.2020.132773

[18] Zhang, C., Zhang, G., Cao, X., Yang, Y., Wang, L., Liu, L., Li, C., & Li, L. (2023). Methodology for measuring the fill factor of silicon photomultipliers. Measurement, 213, 112720. https://doi.org/10.1016/j.measurement.2023.112720

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Published

2023-12-30

How to Cite

Różycka, Marta, et al. “The Use of One-Component Plasma in the ICP-RIE Etching Process of Periodic Structures for Applications in Photodetector Arrays”. Metrology and Measurement Systems, vol. 30, no. 4, Dec. 2023, pp. 809-1, doi:10.24425/mms.2023.147955.

Issue

Vol. 30 No. 4 (2023)

Section

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