Low-noise high-resolution CMOS readout ASIC for silicon strip X-ray detectors

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DOI:

https://doi.org/10.24425/opelre.2025.156670

Abstract

This work presents the design, characterisation, and measurement results of the silicon strip sensor readout circuit for X-ray applications. The key design goals were a noise level below 50 electrons rms, low power consumption (below 10 mW per channel) and a compact layout. The prototype integrated circuit was designed and fabricated in a 180 nm CMOS technology, incorporating eight charge-processing channels, biasing circuits, reset and baseline restoration logic, and a calibration system.

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Published

2026-03-07

How to Cite

Zubrzycka-Singh, Weronika. “Low-Noise High-Resolution CMOS Readout ASIC for Silicon Strip X-Ray Detectors”. Opto-Electronics Review, vol. 33, no. 4, Mar. 2026, p. e156670 , doi:10.24425/opelre.2025.156670.

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