Suppression of thermal donors in silicon by nickel impurity atoms

Abstract

The article shows that doping silicon with nickel in the temperature range of T = 1000–1250 °C makes it possible to almost completely suppress the generation of thermal donors during thermal annealing in the temperature range of T = 100–700 °C. It has been established that impurity nickel atoms form clusters and precipitates in silicon that absorb oxygen atoms. A method for producing silicon with stable electrophysical parameters has been proposed. The proposed method for gettering uncontrolled impurity atoms can be used in various electronic production. This makes it possible to obtain a silicon material with stable doping parameters containing nickel impurity atoms.